ZnO:Al based transparent thin film transistors

Ching Ting Lee, Wen Ming Shien, Hsin Ying Lee, Cheng Hsu Chou

研究成果: Conference contribution

2 引文 斯高帕斯(Scopus)

摘要

In this work, the transparent thin film transistors (TTFTs) with slightly Al-doped ZnO films as the channel layers were fabricated by a magnetron radio frequency co-sputtering system. The performances of the TTFTs with various thicknesses of the channel layers were characterized. When the thickness of the channel layer was 25 nm, the field-effect carrier mobility and the on/off current ratio of the TTFTs were as high as 32.5 cm2/V-s and 10 7, respectively. The DC characteristics of the ZnO:Al based TTFTs at different temperatures were also measured, showing a reasonable thermal stability.

原文English
主出版物標題21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
頁面65-66
頁數2
DOIs
出版狀態Published - 2008 十二月 1
事件21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008 - Newport Beach, CA, United States
持續時間: 2008 十一月 92008 十一月 13

出版系列

名字Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN(列印)1092-8081

Other

Other21st Annual Meeting of the IEEE Lasers and Electro-Optics Society, LEOS 2008
國家/地區United States
城市Newport Beach, CA
期間08-11-0908-11-13

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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