ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy

W. R. Chen; S. J. Chang; Y. K. Su; T. Y. Tsai; J. F. Chen; W. H. Lan; W. J. Lin; Y. T. Cherng; C. H. Liu; U. H. Liaw

doi:10.1006/spmi.2002.1057

ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy

W. R. Chen, S. J. Chang, Y. K. Su, T. Y. Tsai, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, U. H. Liaw

研究成果: Article › 同行評審

摘要

In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam epitaxy (MBE). It was found that the migration enhanced epitaxy (MEE) process could significantly improve the crystal quality of the subsequently grown ZnSe epitaxial layers and ZnSSe/ZnSe SLS even with a high Se background partial pressure. It was found that the sulfur composition was 0.075, 0.088 and 0.12 for samples grown at 265, 255 and 235° C, respectively, which suggests that sulfur incorporation efficiency is higher at lower temperatures. It was also found that the crystal quality of the ZnSSe/ZnSe SLS layers, grown on top of the MEE ZnSe buffer layer, is reasonably good.

原文	English
頁（從 - 到）	59-63
頁數	5
期刊	Superlattices and Microstructures
卷	32
發行號	1
DOIs	https://doi.org/10.1006/spmi.2002.1057
出版狀態	Published - 2002 七月

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.2002.1057

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@article{33dcf7a1a25b4a68bd85a789b24aa02d,

title = "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy",

abstract = "In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam epitaxy (MBE). It was found that the migration enhanced epitaxy (MEE) process could significantly improve the crystal quality of the subsequently grown ZnSe epitaxial layers and ZnSSe/ZnSe SLS even with a high Se background partial pressure. It was found that the sulfur composition was 0.075, 0.088 and 0.12 for samples grown at 265, 255 and 235° C, respectively, which suggests that sulfur incorporation efficiency is higher at lower temperatures. It was also found that the crystal quality of the ZnSSe/ZnSe SLS layers, grown on top of the MEE ZnSe buffer layer, is reasonably good.",

author = "Chen, {W. R.} and Chang, {S. J.} and Su, {Y. K.} and Tsai, {T. Y.} and Chen, {J. F.} and Lan, {W. H.} and Lin, {W. J.} and Cherng, {Y. T.} and Liu, {C. H.} and Liaw, {U. H.}",

note = "Funding Information: Acknowledgements—This work is partially supported by the National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005.",

year = "2002",

month = jul,

doi = "10.1006/spmi.2002.1057",

language = "English",

volume = "32",

pages = "59--63",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "1",

}

TY - JOUR

T1 - ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy

AU - Chen, W. R.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Tsai, T. Y.

AU - Chen, J. F.

AU - Lan, W. H.

AU - Lin, W. J.

AU - Cherng, Y. T.

AU - Liu, C. H.

AU - Liaw, U. H.

N1 - Funding Information: Acknowledgements—This work is partially supported by the National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005.

PY - 2002/7

Y1 - 2002/7

N2 - In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam epitaxy (MBE). It was found that the migration enhanced epitaxy (MEE) process could significantly improve the crystal quality of the subsequently grown ZnSe epitaxial layers and ZnSSe/ZnSe SLS even with a high Se background partial pressure. It was found that the sulfur composition was 0.075, 0.088 and 0.12 for samples grown at 265, 255 and 235° C, respectively, which suggests that sulfur incorporation efficiency is higher at lower temperatures. It was also found that the crystal quality of the ZnSSe/ZnSe SLS layers, grown on top of the MEE ZnSe buffer layer, is reasonably good.

AB - In this study, ZnSe epitaxial layers and ZnSSe/ZnSe strained layer superlattice (SLS) layers were grown on top of bare (100) GaAs substrates by molecular beam epitaxy (MBE). It was found that the migration enhanced epitaxy (MEE) process could significantly improve the crystal quality of the subsequently grown ZnSe epitaxial layers and ZnSSe/ZnSe SLS even with a high Se background partial pressure. It was found that the sulfur composition was 0.075, 0.088 and 0.12 for samples grown at 265, 255 and 235° C, respectively, which suggests that sulfur incorporation efficiency is higher at lower temperatures. It was also found that the crystal quality of the ZnSSe/ZnSe SLS layers, grown on top of the MEE ZnSe buffer layer, is reasonably good.

UR - http://www.scopus.com/inward/record.url?scp=23044493515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=23044493515&partnerID=8YFLogxK

U2 - 10.1006/spmi.2002.1057

DO - 10.1006/spmi.2002.1057

M3 - Article

AN - SCOPUS:23044493515

VL - 32

SP - 59

EP - 63

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 1

ER -