ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

T. K. Lin; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. K. Wang; Sheng-Po Chang; C. M. Chang; J. J. Tang; B. R. Huang

doi:10.1016/j.mseb.2005.03.002

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

T. K. Lin
, S. J. Chang
, Y. K. Su
, Y. Z. Chiou
, C. K. Wang
, Sheng-Po Chang
, C. M. Chang
, J. J. Tang
, B. R. Huang

研究成果: Article › 同行評審

31 引文斯高帕斯（Scopus）

摘要

Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 ^-13 W and the maximum normalized detectivity (D^*) of 9.3 × 10¹¹ cm Hz^0.5 W^-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D^* of the heteroepitaxial ZnSe photodetector were 2.9 × 10^-12 W and 2.44 × 10¹¹ cm Hz^0.5 W^-1, respectively.

原文	English
頁（從 - 到）	202-205
頁數	4
期刊	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
卷	119
發行號	2
DOIs	https://doi.org/10.1016/j.mseb.2005.03.002
出版狀態	Published - 2005 5月 25

All Science Journal Classification (ASJC) codes

一般材料科學
凝聚態物理學
材料力學
機械工業

存取文件

10.1016/j.mseb.2005.03.002

其它文件與鏈接

引用此

@article{3fb99b602804414192205f5f6d1f7621,

title = "ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates",

abstract = "Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12\%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.",

author = "Lin, \{T. K.\} and Chang, \{S. J.\} and Su, \{Y. K.\} and Chiou, \{Y. Z.\} and Wang, \{C. K.\} and Sheng-Po Chang and Chang, \{C. M.\} and Tang, \{J. J.\} and Huang, \{B. R.\}",

note = "Funding Information: This work was supported by National Science Council under contract numbers NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.",

year = "2005",

month = may,

day = "25",

doi = "10.1016/j.mseb.2005.03.002",

language = "English",

volume = "119",

pages = "202--205",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

AU - Lin, T. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Wang, C. K.

AU - Chang, Sheng-Po

AU - Chang, C. M.

AU - Tang, J. J.

AU - Huang, B. R.

N1 - Funding Information: This work was supported by National Science Council under contract numbers NSC-93-2623-7-006-003 and NSC 93-2215-E-218-013.

PY - 2005/5/25

Y1 - 2005/5/25

N2 - Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.

AB - Homoepitaxial and heteroepitaxial ZnSe metal-semiconductor-metal (MSM) photodetectors were both fabricated and characterized. It was found that homoepitaxial ZnSe MSM photodetector could provide us smaller dark current and large photocurrent. With an incident wavelength of 448 nm, it was found that the maximum responsivities for the homoepitaxial and heteroepitaxial ZnSe photodetectors were 0.128 and 0.045 A/W, which corresponds to a quantum efficiency of 36 and 12%, respectively. Furthermore, it was found that we achieved the minimum noise equivalent power (NEP) of 7.6 × 10 -13 W and the maximum normalized detectivity (D*) of 9.3 × 1011 cm Hz0.5 W-1 from our homoepitaxial ZnSe photodetector. In contrast, NEP and D* of the heteroepitaxial ZnSe photodetector were 2.9 × 10-12 W and 2.44 × 1011 cm Hz0.5 W-1, respectively.

UR - https://www.scopus.com/pages/publications/17844409567

UR - https://www.scopus.com/pages/publications/17844409567#tab=citedBy

U2 - 10.1016/j.mseb.2005.03.002

DO - 10.1016/j.mseb.2005.03.002

M3 - Article

AN - SCOPUS:17844409567

SN - 0921-5107

VL - 119

SP - 202

EP - 205

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 2

ER -

ZnSe MSM photodetectors prepared on GaAs and ZnSe substrates

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此