TY - JOUR
T1 - ZnSe/ZnCdSe heterostructure nanowires
AU - Hsiao, C. H.
AU - Chang, Shoou-Jinn
AU - Hung, S. C.
AU - Cheng, Y. C.
AU - Huang, B. R.
AU - Wang, S. B.
AU - Lan, B. W.
AU - Chih, S. H.
PY - 2010/5/1
Y1 - 2010/5/1
N2 - The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.
AB - The authors report the growth of high density ZnSe/ZnCdSe heterostructure nanowires on oxidized Si substrate. It was found that the as-grown nanowires were tapered with mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from these ZnSe/ZnCdSe heterostructure nanowires were much larger than observed from the homogeneous ZnSe nanowires. Furthermore, it was found that activation energies for the nanowires with well widths of 6, 12, 18 and 24 nm were 22, 41, 67 and 129 meV, respectively.
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U2 - 10.1016/j.jcrysgro.2010.02.008
DO - 10.1016/j.jcrysgro.2010.02.008
M3 - Article
AN - SCOPUS:77950296652
SN - 0022-0248
VL - 312
SP - 1670
EP - 1675
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 10
ER -