@article{5dcd603bad9d441a9ab1061356aa6434,
title = "ZnSe/ZnCdSeTe superlattice nanotips",
abstract = "The authors report the growth of quaternary ZnCdSeTe nanotips and ZnSe/ZnCdSeTe superlattice nanotips on oxidized Si(100) substrate. It was found that the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnCdSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnCdSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnCdSeTe superlattice nanotips with well widths of 12, 16, 20, and 24 nm were 189, 205, 292, and 240 meV, respectively.",
author = "Chang, {S. J.} and Hsiao, {C. H.} and Hung, {S. C.} and Chih, {S. H.} and Wang, {S. B.} and Cheng, {Y. C.} and Huang, {B. R.} and Chang, {S. P.} and Young, {S. J.}",
note = "Funding Information: Manuscript received January 8, 2010; revised June 9, 2010; accepted July 28, 2010. Date of publication August 16, 2010; date of current version July 8, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University under projects from the Ministry of Education, Taiwan, in part by the Ministry of Economic Affairs under Grant NSC 98-EC-17-A-09020769 and Grant NSC 98-2221-E158-006, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The review of this paper was arranged by Associate Editor D. Litvinov.",
year = "2011",
month = jul,
doi = "10.1109/TNANO.2010.2066572",
language = "English",
volume = "10",
pages = "682--687",
journal = "IEEE Transactions on Nanotechnology",
issn = "1536-125X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",
}