ZnSTeSe metal-semiconductor-metal photodetectors

S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, U. H. Liaw

研究成果: Article同行評審

20 引文 斯高帕斯(Scopus)

摘要

High-quality quaternary ZnSTeSe epitaxial layers were successfully grown by molecular beam epitaxy (MBE). It was found that a ZnS0.18Se0.82 layer was automatically formed in between the ZnSe buffer layer, and the ZnS0.17Te0.08Se0.75 epitaxial layer, when we increased the ZnS cell temperature. ZnSTeSe metal-semiconductor-metal (MSM) photodetectors were also fabricated for the first time. It was found that we could achieve a photo current to dark current contrast higher than five orders of magnitude by applying a 10-V reverse bias. We also found that the maximum photo responsivity is about 0.4 A/W under a 10-V reverse bias. Such a value suggests that the ZnSTeSe MSM photodetector is potentially useful in the blue-UV spectral region.

原文English
頁(從 - 到)188-190
頁數3
期刊IEEE Photonics Technology Letters
14
發行號2
DOIs
出版狀態Published - 2002 二月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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