Electrical Properties of Graphene on β phase silicon nitride

論文翻譯標題: 石墨烯在β相氮化矽基板元件之電性研究
  • 陳 谷宇

學生論文: Master's Thesis

摘要

Abstract Graphene is a rising star in both science and technology due to its unique electronic thermal and mechanical properties However graphene family is generally supported on silicon dioxide substrates; strong impurity scatterings at the interface obscure the study of the fundamental physics in graphene systems Although suspending graphene and boron nitride [BN] as the substrate lead to a substantial improvement these methods are unsuitable for massive production and thus their implications are severely limited In principle epitaxial monocrystalline β-silicon nitride [β-Si3N4] substrates match graphene lattice which reduce interfacial strain like graphene/BN devices and exhibit higher-κ dielectric constant than that on BN substrates Graphene family on epitaxial β-Si3N4/Si substrates may be a promising structure in 2D-material integrated circuits on wafer scale Here we demonstrate the carrier mobility of single-layer graphene/β-Si3N4 devices is higher than 5000 cm^2?(v s) before using the annealing process In our experimental result we report on the characterization of magnetotransport measurements in the graphene’s devices
獎項日期2015 八月 10
原文English
監督員Tse-Ming Chen (Supervisor)

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