Fabrication of ZnO:Ga Transparent Electrodes with Surface Modifications and these Applications in RRAM Device

論文翻譯標題: 氧化鋅摻鎵透明電極之製備表面改質及其應用於電阻式記憶體:氫電漿處理、氮氫退火與二氧化鉬緩衝層
  • 王 俐文

學生論文: Master's Thesis


Transparent conductive oxides (TCOs) bear more importance as the semiconductor industry develops TCOs can be used for transparent resistive random access memory (RRAM) photodetectors and solar cells In this study Ga:ZnO (GZO) thin films were fabricated as TCOs due to their non-toxicity and stability Three different methods were proposed to improve the electrical properties of GZO thin films: (1) hydrogen plasma post-annealing (2) nitrogen/hydrogen (N2/H2) mixture gas furnace annealing and (3) using the popular 2D material MoS2 quantum dot films as the buffer layer We used radio frequency sputtering to deposit the GZO on the thin films The sheet resistance of GZO thin films reduced under hydrogen plasma treatment and N2/H2 furnace annealing treatment Film transmittance increased after N2/H2 mixture gas furnace annealing Comparisons of these treatments will be discussed MoS2 buffer layer can effectively reduce the sheet resistance of films The detailed mechanism was also investigated  For RRAM applications the GZO bottom electrodes under N2/H2 post treatment not only improved the RRAM on/off ratio by six orders but also increased the transmittance of the device
獎項日期2018 8月 28
監督員Sheng-Yuan Chu (Supervisor)