Gate Oxide scaling Effect on MOSFETs and TFETs by TCAD Simulations

  • 尤 磊安

學生論文: Master's Thesis

摘要

獎項日期2018 八月 15
原文English
監督員Kuo-Hsing Kao (Supervisor)

引用此

Gate Oxide scaling Effect on MOSFETs and TFETs by TCAD Simulations
磊安, 尤. (Author). 2018 八月 15

學生論文: Master's Thesis