Improved performance of electroluminescence in a n-ZnO microrod/p-GaN-based light-emitting diodes with SiO2 inserting nanolayer

論文翻譯標題: 藉由插入中間層二氧化矽奈米層改善n型氧化鋅與p型氮化鎵發光二極體的電激發光的表現
  • 徐 昇明

學生論文: Master's Thesis

摘要

Zinc oxide (ZnO) has a wide band-gap (3 37eV) and also a large exciton binding energy (60meV) which makes it valuable for short wavelength UV light emitting diodes (LED) and laser device As a construction material GaN are often chosen due to its little lattice mismatch and crystallographic similarity with ZnO A ZnO microrod has an advantage in its hexagonal microcavity which provides a superior resonant cavity for the light confinement To enhance emitting intensity an intermedium layer between the ZnO microrod and p-GaN thin film was employed Here we demonstrate an intense UV polarized single horizontal n-ZnO microrod/p-GaN heterojunction light-emitting diodes with a sandwiched SiO2 layer The characterization of the fabricated device shows good diode behavior with low turn-on voltage of 4 5 V and strong electroluminescence (EL) intensity with dominant peak of 392 nm under the operation of forward injection currents The enhanced EL performance is associated with optical confinement and carrier confinement effects by inserting SiO2 intermediate layer The origin of EL emission bands can be confirmed by polarization-resolved EL measurement
獎項日期2016 八月 15
原文English
監督員Hsu-Cheng Hsu (Supervisor)

引用此

Improved performance of electroluminescence in a n-ZnO microrod/p-GaN-based light-emitting diodes with SiO2 inserting nanolayer
昇明, 徐. (Author). 2016 八月 15

學生論文: Master's Thesis