Improving optical performance of InGaN/GaN multiple quantum wells based light-emitting diodes

論文翻譯標題: 提升氮化銦鎵/氮化鎵多重量子井發光二極體之光學表現
  • 蔡 勝傑

學生論文: Doctoral Thesis


This research is focused on light emission efficiency enhancement of InGaN/GaN multiple quantum wells(MQWs) based ultraviolet(UV) blue(B) and green(G) light-emitting diodes (LEDs) which were grown by metalorganic chemical vapor deposition The major scope is to increase the optical performance including: (1) reduction of dislocations by tuning total working pressure to modify the morphology during the buffer layer growth in UV LEDs (2) elimination of the V-defects by changing the temperature of growing GaN capping layer in B LEDs (3) fabrication of the more uniform and smaller embedded quantum dots in InGaN QWs by changing working pressure during the InGaN QWs layers growth in G LEDs The achievements proposed in this research provide effective schemes to improve the light output power for the InGaN/GaN MQWs based LEDs
獎項日期2017 1月 17
監督員Chuan-Pu Liu (Supervisor)