Magnetic and Electrical Properties of Cr and Sb Doped Bi2Se3 Topological Insulator

論文翻譯標題: 硒化鉍拓樸絕緣體摻雜銻及鉻之電性及磁性探討
  • 廖 至為

學生論文: Master's Thesis


Sb doped and Cr doped Bi2Se3 topological insulators have been established on sapphire (0001) substrate by molecular beam epitaxy (MBE) Structural characterization and electrical properties were verified by in-situ reflection high energy electron diffraction (RHEED) ex-situ atomic force microscopy (AFM) X-ray diffraction (XRD) and carrier density measurements The real concentration of each element in our sample were verified by X-ray photoelectron spectroscopy (XPS) and the band structure of samples were revealed by angle-resolved photoemission spectroscopies (ARPES) The weak-anti localization (WAL) and weak localization (WL) performance were investigated in Sb doped Bi2Se3 and Cr-doped Bi2Se3 through the magnetoconductivity Further increase Sb doping with Cr-doping fixed would enhance WL behavior in Sb Cr co-doped Bi2Se3 In addition the curie temperature of Cr-doped Bi2Se3 was observed by the exchanging performance of magnetoconductivity with the altering measured temperature
獎項日期2016 八月 17
監督員Jung-Chun Huang (Supervisor)