Modeling and Simulation of GeSn-based Field Effect Transistors

摘要

Modeling and Simulation of GeSn-based Field Effect Transistors Jen-Hong Liao*　　　 Kuo-Hsing Kao** MS Degree program on Nano-Integrated Circuit Engineering National Cheng Kung University Abstract Tunnel field-effect transistors have the potential to overcome the subthreshold slope limit of the conventional metal-oxide-semiconductor field effect transistors at room temperature They allow to further scale down the supply voltage threshold voltage and power consumption of the integrated circuits The one of the main challenges of group-IV-based TFETs is the unsatisfactory on-current due to the phonon-assisted tunneling through the large indirect bandgaps This article is devoted to discuss the direct and indirect band-to-band tunneling in group-IV semiconductors Although Ge and SiGe possess smaller bandgaps and lighter carrier effective masses theoretical and experimental result still unsatisfactory improvement To further enhance the TFET performance exploitation of direct BTBT in group-IV semiconductors is a promising approach GeSn has emerged as a promising alternative alloy to achieve tunable direct bandgap among group IV materials By increasing the Sn concentration the bandgaps of relaxed GeSn alloys exhibit a transition from indirect to direct In addition GeSn possess smaller bandgaps and lighter carrier effective masses than Ge In this dissertation I will discuss GeSn-based Field Effect TransistorsIn this study we utilize 8-k·p model to calculate GeSn energy bandgap and effective mass In addition we also explore GeSn physical property which consider nonparabolicity multi-valley and quantum size confinement At last by using TCAD to simulate and compare GeSn-based property which include TFETs PNIN TFETs and MOSFET devices *Author **Advisor Keywords: MOSFET、CMOS、Tunnel FET、subthreshold slope SS、Germanium tin

獎項日期	2016 7月 6
原文	English
監督員	Kuo-Hsing Kao (Supervisor)