Multi-optical method on analyzing the structural evolution of SiGe ultrathin layer

論文翻譯標題: 以多種光學方法分析SiGe超薄膜的結構演進
  • 吳 宗哲

學生論文: Master's Thesis

摘要

In order to reduce the scale of devices the further scale down of transistors is a trend of semiconductor fabrication It is important that fabricate ultra-shallow junction keep high fabrication quality and electrical properties with the reducing of transistors scale In under 7 nm process the source/drain of field effect transistors (FETs) fabricating method varied from B or P-implanted Si to chemical vapor deposition (CVD) SiGe alloy Under this change the behaviors after necessary rapid thermal annealing (RTA) has become an unknown topic for study The aggregation and diffusion of Ge also become a key points for research In the real process they usually used high resolution transmission electron microscopy (HRTEM) to observe the problem but this is s destructive analysis method In this thesis I used multi-optical method including UV Raman X-ray photoelectron spectroscopy (XPS) and Reflective second harmonics generation (RSHG) to analyze the structure of the B-doped SiGe ultrathin film and provided some non-destructive structure analyzing technique Furthermore the behaviors of B-doped SiGe film after RTA the optical properties of SiGe alloy and the influence caused by high B dopant are also the destination of this research In this thesis I first used pure SiGe thin film and analyzed its spectra as reference Then I compared this to other B-doped SiGe thin film and found the variation on the spectra Second I applied RTA on these samples and used optical method to analyze the evolution of them Finally I would combine these information form spectra and realize the structure evolution of B-doped SiGe ultrathin film
獎項日期2018 八月 1
原文English
監督員Kuang-Yao Lo (Supervisor)

引用此

Multi-optical method on analyzing the structural evolution of SiGe ultrathin layer
宗哲, 吳. (Author). 2018 八月 1

學生論文: Master's Thesis