Particle-In-Cell Simulation of Two Dimensional Trench Geometry in Capacitively Coupled Plasma

摘要

For an efficient etching by plasma in generating trench geometries anisotropy is an important factor For the ions to perpendicularly bombard the semiconductor surface stationary plasma sheaths need to be formed to accelerate the ions However not many journal publications have reported on the stability of a plasma in a multi-dimensional trench geometry A Particle-in-Cell model is built solely from the beginning in Fortran 95 to investigate basic plasma interaction between two electrode plates including ions and electrons A secondary electron emission (SEE) effect in one-dimensional PIC model is incorporated Then our PIC model is extend to a two-dimensional trench geometry The plasma behavior in the vicinity of the trench geometry is investigated by varying its size In this study radio frequency (RF) electric potential is employed in the system as in capacitively coupled plasma (CCP) process widely used in the plasma etching process Furthermore the influence of charging up by ions’ bombardment which results in a positive potential on the trench bottom is also examined

獎項日期	2016 2月 3
原文	English
監督員	Yasutaro Nishimura (Supervisor)